Triode/MOS tube/transistor/module

Type: 2 P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 5.5A Power (Pd): 2.1W On-resistance (RDS(on)@Vgs,Id): 45Ω@10V, 3A

MOS, TO-252, N-channel, 650V, 8A, 600mΩ (Max), 25W

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Transistor Type: 1 NPN - Pre-biased Power (Pd): 200mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V

Type: N-channel Drain-source voltage (Vdss): -55V Continuous drain current (Id): 2A Power (Pd): 1.56W On-resistance (RDS(on)

Dual NPN, 40V, 0.2A

N-channel, Vces=600V, Ic=9A

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.