Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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KY (Han Kyung Won)
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U-NIK (Xu Kang)
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Littelfuse (American Littelfuse)
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Guoxin Jiapin
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ST (STMicroelectronics)
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TOSHIBA (Toshiba)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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HXY MOSFET (Huaxuanyang Electronics)
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ST (STMicroelectronics)
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WINSOK (Weishuo)
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Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 36 VGS(th)(v) 1.6 RDS(ON)(m?)@4.211V 19 Qg(nC)@4.5V QgS(nC) 6.4 Qgd(nC) 9.6 Ciss(pF) 2100 Coss(pF) 140 Crss(pF) 100
Descripción
ST (STMicroelectronics)
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NPN,Vceo=45V,Ic=100mA
Descripción
MSKSEMI (Mesenco)
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Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -30A On-Resistance (RDS(on)@Vgs,Id): 10mΩ@4.5V, 13mΩ@2.5V, Threshold Voltage (Vgs(th)@Id): -0.4V to -1.0V@250uA
Descripción
Infineon (Infineon)
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VBsemi (Wei Bi)
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40V N-Channel MOSFETs
Descripción
APEC (Fuding)
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