Triode/MOS tube/transistor/module

N-channel, 800V, 7A, 1.5Ω@10V

1200V 14A 75W

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are next-generation IGBTs offering superior SCIS capability in D?-Pak (TO-263) and TO-220 plastic encapsulation. These devices are suitable for use in automotive ignition circuits, especially as coil drivers. Internal diodes provide voltage clamping without external components. EcoSPARK devices can be customized for specific clamping voltages. For more information, please contact the nearest ON Semiconductor sales office. The previous development type was 49443.

NPN, Vceo=50V, Ic=150mA, hfe=200~400, screen printing LG

N-channel, 100V, 130A, 9mΩ@10V

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 1.8 RDS(ON)(m?)@4.195V 4.6 Qg(nC)@4.5V 9.2 QgS(nC) 6 Qgd(nC) 2 Ciss(pF) 1350 Coss(pF) 900 Crss(pF) 65