Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
Fabricantes
N-channel, 80V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 75V, 100A, 4.2mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
Automotive Power MOSFETs for compact and efficient designs with 8x8mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.
Descripción
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
CBI (Creation Foundation)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descripción
VBsemi (Wei Bi)
Fabricantes