Triode/MOS tube/transistor/module

MOS tube, DFN-8 5*6, N channel, withstand voltage: 60V, current: 90A, 10V internal resistance (Max): 5.5mΩ, power: 100W

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This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

PNP, Vceo=-40V, Ic=-200mA, hfe=30~300

N-channel, 30V, 36A