Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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UMW (Friends Taiwan Semiconductor)
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LGE (Lu Guang)
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JJW (Jiejiewei)
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Gate-sensitive four-quadrant thyristor for direct connection to microcontrollers, logic ICs, and low-power trigger circuits
Descripción
VBsemi (Wei Bi)
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SPS (American source core)
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30V 54A N-channel 4mΩ@10V PDFN3x3-8
Descripción
CJ (Jiangsu Changdian/Changjing)
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Infineon (Infineon)
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N-channel, 500V, 5A, 1.7Ω@10V
Descripción
AGM-Semi (core control source)
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APM (Jonway Microelectronics)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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RENESAS (Renesas)/IDT
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PNP VCEO=-60V IC=-15A
Descripción
TOSHIBA (Toshiba)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 95A Power (Pd): 112W On-Resistance (RDS(on)@Vgs,Id): 5.8mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 39.5nC@10V Input capacitance (Ciss@Vds): 1.99nF@50V , Vds=100V Id=95A Rds=5.8mΩ, Working temperature: -55℃~+150℃@(Tj)
Descripción
DIODES (US and Taiwan)
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LONTEN (Longteng Semiconductor)
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ST (STMicroelectronics)
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