Triode/MOS tube/transistor/module
TOSHIBA (Toshiba)
Fabricantes
Infineon (Infineon)
Fabricantes
Vce=600V, Ic=10A, Vce(sat)=1.5V
Descripción
KODENSHI AUK (Photonics)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TI (Texas Instruments)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN; 120V; 1A; 0.5W; frequency 100MHZ
Descripción
YANGJIE (Yang Jie)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
LDMOS RF RF MOS
Descripción