Triode/MOS tube/transistor/module
HUASHUO (Huashuo)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
MCC (Meiweike)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
NPN Vceo=50V Ic=2A PC=1.5W
Descripción
PINGWEI (Pingwei)
Fabricantes
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
The FNB35060T is a Motion SPM 3 module that provides a full-featured, high-performance inverter output stage for AC direct-sensing, BLDC, and PMSM motors. The modules integrate optimized gate drive for the built-in IGBTs to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
PNP, Vceo=-45V, Ic=-500mA, hfe=250~600
Descripción
ST (STMicroelectronics)
Fabricantes