Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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RealChip (Shenxin Semiconductor)
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VBsemi (Wei Bi)
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TOSHIBA (Toshiba)
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YANGJIE (Yang Jie)
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MMBTA05-F2-0000HF
Descripción
DIODES (US and Taiwan)
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VBsemi (Wei Bi)
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LGE (Lu Guang)
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TWGMC (Taiwan Dijia)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 100mA Power (Pd): 200mW
Descripción
FOSAN (Fuxin)
Fabricantes
Dual N-channel, 20V, 6A, 30mΩ@4.5V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
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CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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TOSHIBA (Toshiba)
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AGM-Semi (core control source)
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Type: P-channel Drain-source voltage (Vdss): 30V Continuous Drain current (Id): 18A Power (Pd): 28W On-resistance (RDS(on)@Vgs, Id: 18mΩ@10V, 5A Threshold voltage (Vgs (th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 12nC@10V Input capacitance (Ciss@Vds): 0.86nF@15V, Vds=30v Id=18A Rds=18mΩ, operating temperature: - 55℃~+150℃@(Tj)
Descripción
REASUNOS (Ruisen Semiconductor)
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ElecSuper (Jingxin Micro)
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ST (STMicroelectronics)
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