Triode/MOS tube/transistor/module
YANGJIE (Yang Jie)
Fabricantes
BC817-16W-F2-0000HF
Descripción
Infineon (Infineon)
Fabricantes
AGM-Semi (core control source)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJG60G10A-F1-0100HF
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
onsemi (Ansemi)
Fabricantes
Automotive power MOSFETs. This dual N-channel device uses small footprint encapsulation (2x2 mm) and ON Semiconductor's leading planar process to reduce footprint and improve energy efficiency. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
Descripción
onsemi (Ansemi)
Fabricantes
Convert Semiconductor
Fabricantes
Xiner (Core Energy Semiconductor)
Fabricantes
PUOLOP (Dipu)
Fabricantes
Infineon (Infineon)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 15V Collector Current (Ic): 50mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 100@1mA,5V
Descripción
SILAN (Silan Micro)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 800V, 4.3A, 1.9Ω@10V
Descripción
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
IC(A) 0.5 VCEO(V) 60 hFE(β) 100-400 fT(MHZ) 100 VCBO(V) 60 VCE(sat)(W) 0.25 Type NPN
Descripción
VBsemi (Wei Bi)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes