Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
PNP, Vceo=-160V, Ic=-1.5A, hfe=100~200
Descripción
YONGYUTAI (Yongyutai)
Fabricantes
VISHAY (Vishay)
Fabricantes
KY (Han Kyung Won)
Fabricantes
onsemi (Ansemi)
Fabricantes
NPN, Vceo=40V, Ic=1A
Descripción
N-channel, 600V, 2A
Descripción
JESTEK (JESTEK)
Fabricantes
N-channel 20V 3A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
P-channel, -20V, -70A, 3mΩ@-4.5V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Very low saturation voltage, NPN, 50V, 2A
Descripción
N-channel, 20V, 5.2A, 40mΩ@2.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
NPN, Vceo=50V, Ic=150mA, hfe=200~400
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general purpose amplifier and switching applications. TIP31, TIP31A, TIP31B, TIP31C (NPN); and TIP32, TIP32A, TIP32B, TIP32C (PNP) are complementary devices
Descripción
onsemi (Ansemi)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes