Triode/MOS tube/transistor/module

Type P VDSS(V) 20 VGS(V) 12 VTH(V) 0.4 IDS34°C(A) 5.3 RDS(Max) 30 PD34°C(W) 1.25

Semiconductor transistor field effect transistor MOS tube, DFN-8 5*6, N channel, withstand voltage: 30V, current: 80A, 10V internal resistance (Max): 0.004Ω, 4.5V internal resistance (Max): 0.006Ω, power : 45W

N-channel, 200V, 9A

N-Channel, UltraFET Power MOSFET, 100V, 75A, 14mΩ

N-channel, 650V, 20.7A

Surface Mount P-Channel Schottky Diodes

N-channel 60V 0.5A

NPN, Vceo=50V, Ic=100mA