Triode/MOS tube/transistor/module

VCES(V) 650 IC(A)@153℃ 75 VCE(sat)(V) 1.7 E(off)(mj) - Vf(V) 2.3

Dual N-channel

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 58A Power (Pd): 4.6W; 46W On-Resistance (RDS(on)@Vgs,Id): 7.5mΩ@16A, 10V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

PNP, Vceo=-160V, Ic=-1.5A, hfe=100~200

NPN General Purpose Amplifier This device is suitable for general purpose amplifier applications with collector currents up to 300 mA. From Process 33.

N-channel 200V 43A