Triode/MOS tube/transistor/module
BORN (Born Semiconductor)
Fabricantes
transistors,PNP 40V 200mA 200mW,SOT-23
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VISHAY (Vishay)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
NPN, Vceo=25V, Ic=800mA, hfe=160~300
Descripción
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
AGM-Semi (core control source)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 70 VGS(th)(v) 1.5 RDS(ON)(m?)@4.360V 8 Qg(nC)@4.5V 20 QgS(nC) 7.6 Qgd(nC) 7.2 Ciss(pF) 2100 Coss(pF) 550 Crss(pF) 180
Descripción
CBI (Creation Foundation)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
XINGUAN (core crown)
Fabricantes
Gallium Nitride GaN 650V Power Transistor(FET)
Descripción
XINGUAN (core crown)
Fabricantes
Gallium Nitride GaN 650V Power Transistor(FET)
Descripción
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes