Triode/MOS tube/transistor/module
SPS (American source core)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 100mA Power (Pd): 125mW
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN 100mA 50V
Descripción
YANGJIE (Yang Jie)
Fabricantes
YJS4447B-F2-0000HF
Descripción
DIODES (US and Taiwan)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
N-channel, 600V, 4.5A, 2.5Ω
Descripción
LRC (Leshan Radio)
Fabricantes
inventchip (Zhenxin Electronics)
Fabricantes
Silicon carbide MOS1200V80mΩ
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Crystal Conductor Microelectronics
Fabricantes
Wuxi Unisplendour
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM II MOSFETs are a family of high voltage MOSFETs based on advanced planar stripe and DMOS technologies. This advanced MOSFET family has the lowest on-resistance among planar MOSFETs while providing excellent switching performance and higher avalanche energy strength. In addition, internal gate supply ESD diodes allow the UniFET II MOSFETs to withstand HBM surge stress above 2kV. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
SINO-IC (Coslight Core)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes