Triode/MOS tube/transistor/module
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 7/9 Continuous Drain Current ID (A) 40
Descripción
LRC (Leshan Radio)
Fabricantes
CYSTECH (Quan Yuxin)
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100V/6.6A N-channel
Descripción
Samwin (Semipower)
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onsemi (Ansemi)
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FOSAN (Fuxin)
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Cmos (Guangdong Field Effect Semiconductor)
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Single N-channel, drain-source voltage (Vdss): 85V, continuous drain current (ld): 160A, RDS(on): 2.8mΩ
Descripción
BLUE ROCKET (blue arrow)
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NCE (Wuxi New Clean Energy)
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LONTEN (Longteng Semiconductor)
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ST (STMicroelectronics)
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PANJIT (Qiangmao)
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LRC (Leshan Radio)
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YANGJIE (Yang Jie)
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Infineon (Infineon)
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VBsemi (Wei Bi)
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Infineon (Infineon)
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N-channel, 25V, 100A, 1mΩ@10V
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 28 VGS(th)(v) 2 RDS(ON)(m?)@4.372V - Qg(nC)@4.5V 12 QgS(nC) 3 Qgd(nC) 3.2 Ciss(pF) 830 Coss(pF) 85 Crss(pF) 64
Descripción