Triode/MOS tube/transistor/module
JUNSHINE (Junshine Technology)
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Ascend (Ansend)
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NCE (Wuxi New Clean Energy)
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onsemi (Ansemi)
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This complementary device is used in medium power amplifiers and switches requiring up to 500 mA collector current. Derived from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
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HUASHUO (Huashuo)
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Slkor (Sakor Micro)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 63A Power (Pd): 54W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,25A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 28.5nC@10V Input Capacitance (Ciss@Vds): 1.49nF@30V , Vds=40V Id=63A Rds=6.5mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
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onsemi (Ansemi)
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onsemi (Ansemi)
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PINGWEI (Pingwei)
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onsemi (Ansemi)
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NPN, Vo=50V, Io=100mA
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VISHAY (Vishay)
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P-channel, -40V, -90A, 0.0094Ω@-10V
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Infineon (Infineon)
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Mini-Circuits
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