Triode/MOS tube/transistor/module

Depletion MOSFET_N-Channel_200V_16A_1.85W

N-channel, 800V, 10A, 720mΩ@10V

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

Transistor Type: NPNP Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 3A Power (Pd): 500mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@2A, 200mA DC current gain (hFE@Ic,Vce): 400@1A, 2V Characteristic frequency (fT): 50MHZ Operating temperature: -55℃~+150℃@(Tj)

Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): IC=3 A, IB=60mA,Max,0.5V; DC current gain (hFE@Ic,Vce): VCE= 2V, IC=500mA ,Min,120, Max,560; Characteristic frequency (fT): VCE= 10V, IC=50mA,Typ,120MHz

N channel

N-channel, 150V, 1.4A, 425mΩ@4.5V

N-channel, 700V, 5.8A