Triode/MOS tube/transistor/module

N-channel, 650V, 15A, 260mΩ@10V

PNP, Vceo=-20V, Ic=-6A

NPN, Vceo=30V, Ic=5A, hfe=340~600

2SA2016 is a bipolar transistor, -50V, -7A, low VCE (sat), (PNP)NPN single PCP, for DC-DC converter applications.

MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.7-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 50

NPN, Vceo=45V, Ic=500mA

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 40V, current: 80A, 10V internal resistance (Max): 0.0048Ω, 4.5V internal resistance (Max): 0.008Ω, power: 115W