Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
N-channel, 60V, 270mA, 5Ω@10V
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 1000V, 13A, 700mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
minos (Minos)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general purpose amplifier and switching applications. TIP31, TIP31A, TIP31B, TIP31C (NPN); and TIP32, TIP32A, TIP32B, TIP32C (PNP) are complementary devices
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
AGM-Semi (core control source)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 4A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 63mΩ@10V,5A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 11.8nC@10V Input Capacitance (Ciss@Vds): 0.553nF@20V Operating Temperature: -55℃~+150℃@( Tj)
Descripción
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 0.3A
Descripción