Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
NIKO-SEM (Nickerson)
Fabricantes
N-channel 30V 7A P-channel -30V -6A MOS tube array
Descripción
onsemi (Ansemi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
P-channel, 12V, 8.2A, 18mΩ@4.5V
Descripción
VISHAY (Vishay)
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 9.8 VGS(th)(v) 1.8 RDS(ON)(m?)@4.295V 18 Qg(nC)@4.5V 6 QgS(nC) 1.5 Qgd(nC) 2.5 Ciss(pF) 590 Coss(pF) 98 Crss(pF) 59
Descripción
MICROCHIP (US Microchip)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 500mW 63-160 BK NPN, Vceo=80V, Ic=1A, hfe=63~160
Descripción
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
Infineon (Infineon)
Fabricantes
Doesshare (Dexin)
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
CBI (Creation Foundation)
Fabricantes
onsemi (Ansemi)
Fabricantes
This 8 A 100 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.
Descripción
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes