Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
N-channel, 100V, 10A
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 5/5.9 Continuous Drain Current ID (A) 70
Descripción
DIODES (US and Taiwan)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
CBI (Creation Foundation)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 650V, 4.5A, 1.8Ω@10V
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2 On-Resistance RDS(ON) (mΩ) 9.6/12 Continuous Drain Current ID (A) 30
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
Infineon (Infineon)
Fabricantes
VISHAY (Vishay)
Fabricantes
PUOLOP (Dipu)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 40V, 1.6m²@10V, 280A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes