Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
HX (Hengjiaxing)
Fabricantes
ST (STMicroelectronics)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
TMC (Taiwan Mao)
Fabricantes
onsemi (Ansemi)
Fabricantes
Ascend (Ansend)
Fabricantes
Infineon (Infineon)
Fabricantes
N+P dual channel, 25V/3.5A(-25V/-2.3A)
Descripción
YANGJIE (Yang Jie)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
AGM-Semi (core control source)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 3A Power (Pd): 1.5W On-resistance (RDS(on)@Vgs,Id: 60mΩ@10V, 3A Threshold voltage ( Vgs(th)@Id): 1.3V@250uA Gate charge (Qg@Vgs): 8.8nC@10V Input capacitance (Ciss@Vds): 0.4nF@30V, Vds=60v Id=3A Rds=60mΩ, operating temperature : -55℃~+150℃@(Tj)
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 75V, 350A, 1.85mΩ@10V
Descripción
SINO-IC (Coslight Core)
Fabricantes
N-channel, 20V
Descripción