Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
Wuxi Unisplendour
Fabricantes
DELTAMOS (Dunwei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 55V, 44A, 27mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
CBI (Creation Foundation)
Fabricantes
MICROCHIP (US Microchip)
Fabricantes
TRR (Mingde Micro)
Fabricantes
NPN 300V 100mA
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 30V, 65A, 10mΩ@10V
Descripción
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): -60V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V Characteristic frequency (fT): 100MHz 100-250 60V, 1A,
Descripción
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
Fabricantes
NPN, Vceo=65V, Ic=100mA, hfe=420~800
Descripción
Wuxi Unisplendour
Fabricantes
Medium and low voltage TRENCH MOSFET
Descripción