Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
LRC (Leshan Radio)
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APM (Jonway Microelectronics)
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TWGMC (Taiwan Dijia)
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Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 60V Collector Current (Ic): 500mA Power (Pd): 330mW DC Current Gain (hFE@Vce,Ic): 10000@5V,100mA
Descripción
PNP Vo=-50V Io=-0.8A PD=0.2W R1=1K R2=10K
Descripción
onsemi (Ansemi)
Fabricantes
Power MOSFET 40V, 37A, 10.3mΩ, Single N-Channel
Descripción
LRC (Leshan Radio)
Fabricantes
PNP, Vceo=-50V, Ic=-1500mA
Descripción
APM (Jonway Microelectronics)
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HUAYI (Hua Yi Wei)
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VBsemi (Wei Bi)
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WEIDA (Weida)
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ElecSuper (Jingxin Micro)
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TWGMC (Taiwan Dijia)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V
Descripción
TMC (Taiwan Mao)
Fabricantes
VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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Crystal Conductor Microelectronics
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CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=20V, Ic=3A, hfe=180~390
Descripción