Triode/MOS tube/transistor/module
ElecSuper (Jingxin Micro)
Fabricantes
CYSTECH (Quan Yuxin)
Fabricantes
110V/1.9A@TC=25℃/ N-channel
Descripción
TOSHIBA (Toshiba)
Fabricantes
Infineon (Infineon)
Fabricantes
Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
NPN Vceo=45V Ic=100mA
Descripción
Infineon (Infineon)
Fabricantes
XCH (Xu Changhui)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 150V Collector current (Ic): 600mA Power (Pd): 350mW DC current gain (hFE@Ic,Vce): 100@10mA, 5V L range 100-200 PNP, Vceo=-150V, Ic=-0.6A, hfe=100~200
Descripción
onsemi (Ansemi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 11/14 Continuous Drain Current ID (A) 30
Descripción
ST (STMicroelectronics)
Fabricantes
REASUNOS (Ruisen Semiconductor)
Fabricantes
Hongjia Orange
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
PNP 250W -250V- 16A Applications: Designed for high power audio, disk head positioners and other linear applications
Descripción
Infineon (Infineon)
Fabricantes