Triode/MOS tube/transistor/module
SPS (American source core)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 9/13 Continuous Drain Current ID (A) 20
Descripción
onsemi (Ansemi)
Fabricantes
Power MOSFET, 40V, 0.82 m, 330 A, Single N-Channel
Descripción
JESTEK (JESTEK)
Fabricantes
MCC (Meiweike)
Fabricantes
Samwin (Semipower)
Fabricantes
N-channel, 650V, 7A, 1.1Ω@10V
Descripción
NPN Vceo=50V Ic=2A
Descripción
GOFORD (valley peak)
Fabricantes
650V 11A 360mΩ@10V
Descripción
SINO-IC (Coslight Core)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 30V, 38.3A, 0.0075Ω@10V
Descripción
FUXINSEMI (Fuxin Senmei)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJG100N04A-F1-0100HF
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes