Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
HUXN (Huixin)
Fabricantes
SMD transistor Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 400V Collector current (Ic): 100mA Power (Pd): 350mW DC current gain (hFE@Ic,Vce): 50@10mA, 10V
Descripción
GOFORD (valley peak)
Fabricantes
LGE (Lu Guang)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
NPN 120W 400V 15A Applications: Designed for high speed, high current switching industrial applications.
Descripción
Sinopower (large and medium)
Fabricantes
SHIKUES (Shike)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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Dual NPN, Vceo=120V, Ic=50mA
Descripción
Convert Semiconductor
Fabricantes
LRC (Leshan Radio)
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Very low saturation voltage, NPN 40V/2A, like PBSS4240, PMMT619, FMMT619.
Descripción
sinai (Sinai)
Fabricantes
P-channel, -30V, -7.1A, 25mΩ@-10V
Descripción
Infineon (Infineon)
Fabricantes
AnBon (AnBon)
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