Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
Sinopower (large and medium)
Fabricantes
AGM-Semi (core control source)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 60A Power (Pd): 30W On-Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,12A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 72nC@10V Input Capacitance (Ciss@Vds): 2.66nF@20V Operating Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
Descripción
CXW (Chengxinwei)
Fabricantes
onsemi (Ansemi)
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This is a 30 V N-channel power MOSFET.
Descripción
VBsemi (Wei Bi)
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SILAN (Silan Micro)
Fabricantes
N-channel, 600V, 5A, 2.15Ω@10V
Descripción
MSKSEMI (Mesenco)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 4.5A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 40mΩ@-4.5V, -3A threshold voltage (Vgs(th)@Id): -1.1V@250uA
Descripción
VBsemi (Wei Bi)
Fabricantes
N-channel, Vce=650V, Ic=40A
Descripción
N-channel, 650V, 7A, 1.6Ω
Descripción
HUAYI (Hua Yi Wei)
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HUASHUO (Huashuo)
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DIODES (US and Taiwan)
Fabricantes
Littelfuse (American Littelfuse)
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TECH PUBLIC (Taizhou)
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XINLUDA (Xinluda)
Fabricantes
High Voltage, High Current Darlington Transistor Array
Descripción