Triode/MOS tube/transistor/module
Ascend (Ansend)
Fabricantes
VDS-20V,ID-13ARDS(on),Typ@VGS=10V6mR
Descripción
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 40V, 172A, 2.5mΩ@10V
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
SPS (American source core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
P-channel, -20V, -12A, 0.0165Ω@-4.5V
Descripción
Applications: adapters, chargers, LED drivers, PFC circuits
Descripción
SILAN (Silan Micro)
Fabricantes
Convert Semiconductor
Fabricantes
onsemi (Ansemi)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 180mV@100mA HFE: 200-400
Descripción
Infineon (Infineon)
Fabricantes
Megapower (Credit Suisse)
Fabricantes
Integrated N-MOS and PNP transistors, small encapsulation
Descripción