Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
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onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
Descripción
VBsemi (Wei Bi)
Fabricantes
N-channel, 30V, 100A, 2mΩ@10V
Descripción
MICRONE (Nanjing Weimeng)
Fabricantes
N-channel, 20V, 5.2A, 37mΩ@10V
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
SHIKUES (Shike)
Fabricantes
Samwin (Semipower)
Fabricantes
N-channel, 60V, 40A, 0.0092Ω@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 5A Power (Pd): 3.1W On-resistance (RDS(on)@Vgs,Id): 125mΩ@10V,4A
Descripción
Ascend (Ansend)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 60mΩ@-10V, -3A Threshold Voltage (Vgs(th)@Id): -1.0 to -2.5V@250uA
Descripción