Triode/MOS tube/transistor/module
Hottech (Heketai)
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Infineon (Infineon)
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ElecSuper (Jingxin Micro)
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SHIKUES (Shike)
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ST (STMicroelectronics)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 54/70 Continuous Drain Current ID (A) 4.1
Descripción
JSMSEMI (Jiesheng Micro)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 400V Collector Current (Ic): 200mA Power (Pd): 350mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic, Ib): 750mV@50mA, 5mA
Descripción
Infineon (Infineon)
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HUASHUO (Huashuo)
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onsemi (Ansemi)
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VBsemi (Wei Bi)
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SHIKUES (Shike)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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ORIENTAL SEMI (Dongwei)
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VBsemi (Wei Bi)
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HUAYI (Hua Yi Wei)
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Potens (Bosheng Semiconductor)
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N-channel, 60V, 5A
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LRC (Leshan Radio)
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