Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
HUXN (Huixin)
Fabricantes
SMD Transistor Transistor Type: 1 NPN- Pre-bias Power (Pd): 200mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V NPN, Vcc=50V, Io=100mA, Pd= 200mW
Descripción
Convert Semiconductor
Fabricantes
TI (Texas Instruments)
Fabricantes
ULQ2003A-Q1 Automotive High Voltage, High Current Darlington Transistor Array
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
NPN 60V 500mA
Descripción
VISHAY (Vishay)
Fabricantes
N-channel, 600V, 4A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LRC (Leshan Radio)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
MMDT3906-F2-0000HF
Descripción
onsemi (Ansemi)
Fabricantes
2SC6097 is a bipolar transistor, 60V, 3A, low VCE(sat), NPN single TP/TP-FA, for high current switching applications.
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 19 VGS(th)(v) 1.6 RDS(ON)(m?)@4.149V 32 Qg(nC)@4.5V 4.1 QgS(nC) 1 Qgd(nC) 2.1 Ciss(pF) 360 Coss(pF) 55 Crss(pF) 46
Descripción