Triode/MOS tube/transistor/module

The combination of low saturation voltage and high gain makes this bipolar power transistor ideal for power-saving high-speed switching applications.

Drain-source voltage (V) -12 Continuous drain current (Id) (A) -5.1 Threshold voltage (V) -1 Power (W) 1.25 On-resistance 33V (Ω) Input capacitance (pF) 920

N channel

This NPN transistor is suitable for general purpose amplifier applications. This device features SOT-723 encapsulation and is suitable for low power surface mount applications where board space is at a premium.

NPN 32V 4A

P-channel, VDSS withstand voltage 20V, ID current 5A, RDON on-resistance 45mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.4-1.0V,

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.