Triode/MOS tube/transistor/module
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
MOSFET N-channel, VDSS withstand voltage 650V, ID current 4A, RDON on-resistance 2.7R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V
Descripción
onsemi (Ansemi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
SHIKUES (Shike)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 2A Power (Pd): 1W On-Resistance (RDS(on)@Vgs,Id): 200mΩ@4.5V, 2A Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
Descripción
VBsemi (Wei Bi)
Fabricantes
WILLSEMI (Will)
Fabricantes
N-channel 60V 85A
Descripción
VISHAY (Vishay)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
Type DNPN IC(A) 0.6 VCBO(V) 75 VCEO(V) 40 VEBO(V) 6 VCE(sat)(V) 1
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
NPN 400V 300mA
Descripción
DIODES (US and Taiwan)
Fabricantes