Triode/MOS tube/transistor/module
Slkor (Sakor Micro)
Fabricantes
LRC (Leshan Radio)
Fabricantes
Gem-micro (crystal group)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
China Resources Huajing
Fabricantes
NPN, Vceo=400V, Ic=12A
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
PNP, Vceo=-45V, Ic=-100mA, hfe=420~800
Descripción
SHIKUES (Shike)
Fabricantes
Infineon (Infineon)
Fabricantes
NPN,Vceo=50V,hfe=80
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
Type N VDSS(V) 50 ID@TC=69?C(A) 0.3 PD@TC=69?C(W) 0.35 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.49V 3000
Descripción
MOS field effect tube
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 150A, 10V internal resistance (Max): 0.003Ω, 4.5V internal resistance (Max): 0.0067Ω, power: 130W
Descripción
VBsemi (Wei Bi)
Fabricantes