Triode/MOS tube/transistor/module
VISHAY (Vishay)
Fabricantes
Ultra high voltage MOS tube
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
Compliant with VTH: 3.0 standard STD10PF06
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
ST (STMicroelectronics)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
N-channel, 85V, 90A
Descripción
SHIKUES (Shike)
Fabricantes
Ultra high voltage MOS tube
Descripción
onsemi (Ansemi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
GL (Optics Lei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is suitable for systems using 5.0 V TTL or CMOS logic.
Descripción
TMC (Taiwan Mao)
Fabricantes
Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 5.5mΩ ID(A) 100A
Descripción