Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
P channel -50V -0.13A
Descripción
onsemi (Ansemi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel 20V 238mA
Descripción
WINSOK (Weishuo)
Fabricantes
Dual N-channel.20V.7.5A.15.5mΩ
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 60V, 100A, 5.6mΩ@10V
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 60V, 100A, 5.6mΩ@10V
Descripción
VISHAY (Vishay)
Fabricantes
N channel + P channel
Descripción
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
NPN, Vceo=100V, Ic=6A
Descripción
onsemi (Ansemi)
Fabricantes
Voltage VDSS20V, conduction resistance Rds8 milliohms, current ID50A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for high frequency amplifiers and oscillators.
Descripción
MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-3 On-Resistance RDS(ON) (mΩ) 17/21.5 Continuous Drain Current ID (A) 7.6
Descripción