Triode/MOS tube/transistor/module

MOS tube, DFN-8 5*6, N channel, withstand voltage: 100V, current: 30A, 10V internal resistance (Max): 35mΩ, power: 75W

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Type: P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 4A Power (Pd): 1.1W On-Resistance (RDS(on)@Vgs,Id): 65Ω@4.5V, 3.2A Threshold voltage (Vgs(th)@Id): 1V@250μA