Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-80V, Ic=-1A, hfe=180~390
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=40V, Ic=2A
Descripción
TOSHIBA (Toshiba)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes
onsemi (Ansemi)
Fabricantes
AGM-Semi (core control source)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 280A Power (Pd): 378W On-Resistance (RDS(on)@Vgs,Id): 1.85mΩ@10V,50A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 140nC@10V Input capacitance (Ciss@Vds): 10.374nF@42V, Vds=85V Id=280A Rds=1.85mΩ, working Temperature: -55℃~+150℃@(Tj)
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 55V, 4.9A, 50mΩ@10V
Descripción
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
AGM-Semi (core control source)
Fabricantes