Triode/MOS tube/transistor/module

This N-channel MOSFET is specifically designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, either synchronously or conventionally switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

Field Effect Transistor (MOSFET) Type: Two N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 53A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V, 20A Threshold voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.63nF@15V , Vds=40V Id =53A Rds=6.5mΩ, working temperature: -55℃~+150℃@(Tj) QFN5*6encapsulation;

N-channel, 75V, 60A, 16mΩ@10V

Dual N-channel, 50V, 280mA, 2Ω@5V

PNP, Vceo=-400V, Ic=-0.2A, hfe=100~200

N-channel 80V 66A

Dual N-channel

Power MOSFET, -20V, -4.4A, 65mΩ, Single P-Channel, TSOP-6

Photovoltaic inverter energy storage UPS power supply VCE=650V Ic=75A Ptot=465W Vce(sat)=1.65V 175℃ Replace Infineon IKW75N65EH5 Silan SGTP75V65FDB1P7