Triode/MOS tube/transistor/module
luxin-semi (Shanghai Luxin)
Fabricantes
Industrial grade Widely used in various high-frequency power supply industries.
Descripción
SPS (American source core)
Fabricantes
VISHAY (Vishay)
Fabricantes
GOFORD (valley peak)
Fabricantes
P-channel, -30V, -16A, 10.6mΩ@-10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 55mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,
Descripción
Dual N-channel, 20V, 7A
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
onsemi (Ansemi)
Fabricantes
These P-channel 1.8V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.
Descripción
TOSHIBA (Toshiba)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
ST (STMicroelectronics)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Drain-source voltage (Vdss): -30V Continuous drain current (Id): -4A Power (Pd): 1.25W On-resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4A
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
LGE (Lu Guang)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 500V, 7.2A, 0.72Ω@10V
Descripción