Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
CBI (Creation Foundation)
Fabricantes
onsemi (Ansemi)
Fabricantes
Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Descripción
ST (STMicroelectronics)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel ignition IGBT for coils on automotive ignition coil driver circuits and plug applications.
Descripción
VBsemi (Wei Bi)
Fabricantes
HGSEMI (Huaguan)
Fabricantes
Seven-way high-gain Darlington array
Descripción
onsemi (Ansemi)
Fabricantes
N-Channel Power Trench MOSFET 150V, 110A, 5.5 mΩ, the latest shielded gate PowerTrench MOSFET with smaller QSYNC and soft reverse recovery intrinsic body diode performance, fast switching speed, can greatly improve the efficiency of synchronous rectification .
Descripción
Infineon (Infineon)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes