Triode/MOS tube/transistor/module
Número de pieza
DIODES (US and Taiwan)
Fabricantes
Dual N-channel, 60V, 510mA, 2.4Ω@10V
Descripción
91668 PCS
En stock
Número de pieza
Tokmas (Tokmas)
Fabricantes
1200V 6A High Voltage MOS
Descripción
91672 PCS
En stock
Número de pieza
NCE (Wuxi New Clean Energy)
Fabricantes
Descripción
55367 PCS
En stock
Número de pieza
KEXIN (科信)
Fabricantes
N-channel 60V 115mA
Descripción
70037 PCS
En stock
Número de pieza
UMW (Friends Taiwan Semiconductor)
Fabricantes
Descripción
67258 PCS
En stock
Número de pieza
CYSTECH (Quan Yuxin)
Fabricantes
-60V/-6.2A /P channel
Descripción
62144 PCS
En stock
Número de pieza
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
MOSFET N-channel, VDSS withstand voltage 650V, ID current 10A, RDON on-resistance 1.05R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V
Descripción
79260 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
This is a 100 V N-channel power MOSFET.
Descripción
79878 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Descripción
85495 PCS
En stock
Número de pieza
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA
Descripción
72389 PCS
En stock