Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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SPS (American source core)
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Infineon (Infineon)
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TWGMC (Taiwan Dijia)
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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
Descripción
SPS (American source core)
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TECH PUBLIC (Taizhou)
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FDC5614P P channel 60V 3A silk screen 564P P-MOS field effect tube field effect tube
Descripción
SI (deep love)
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VBsemi (Wei Bi)
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Infineon (Infineon)
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MCC (Meiweike)
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VO=50V;IO=100mA NPN built-in bias resistor
Descripción
onsemi (Ansemi)
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ST (STMicroelectronics)
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Core Long March
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CRMICRO (China Resources Micro)
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TOSHIBA (Toshiba)
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