Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220, N-channel, 600V, 18A, 450mΩ (Max), 300W
Descripción
STANSON (Statson)
Fabricantes
Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS82°C(A) 5 RDS(Max) 80 PD82°C(W) 2.8
Descripción
AnBon (AnBon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
SILAN (Silan Micro)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Dual N-channel.20V.9.7A.7mΩ
Descripción
VBsemi (Wei Bi)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
KY (Han Kyung Won)
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.65/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 50
Descripción
MATSUKI (pine wood)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
MMDT4403-F2-0000HF
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
The FNB34060T is a Motion SPM 3 module that provides a full-featured, high-performance inverter output stage for AC direct-sensing, BLDC, and PMSM motors. The modules integrate optimized gate drive for the built-in IGBTs to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.
Descripción
JESTEK (JESTEK)
Fabricantes
N-channel 30V 90A
Descripción
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes