Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
DIODES (US and Taiwan)
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APM (Jonway Microelectronics)
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MSKSEMI (Mesenco)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -45V Collector current (Ic): -100mA Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA HFE: 300-400
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-45V, Ic=-0.1A, hfe=125~250, silk screen 3E
Descripción
ST (STMicroelectronics)
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SHIKUES (Shike)
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TECH PUBLIC (Taizhou)
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Infineon (Infineon)
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Convert Semiconductor
Fabricantes
N-channel, 60V, 30A, 40mΩ@10V
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
STANSON (Statson)
Fabricantes
Type N VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS61°C(A) 8.5 RDS(Max) 35 PD61°C(W) 2.8
Descripción
VBsemi (Wei Bi)
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Infineon (Infineon)
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onsemi (Ansemi)
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This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 60V, 0.35A, 1.8Ω@10V
Descripción