Triode/MOS tube/transistor/module

These Dual N-Channel Logic Level Enhancement Mode Field Effect Transistors are produced using Fairchild Semiconductor's proprietary high cell density DMOS technology. This very high density process is tailored to minimize on-resistance. The device is specifically designed for low-voltage applications to replace bipolar digital transistors and small-signal MOSFETS.

Automotive power MOSFETs for compact and efficient designs with DPAK encapsulation and high thermal performance. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V

Type N VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS89°C(A) 30 RDS(Max) 50 PD89°C(W) 60

PNP 3A

N+N channel, 20V, 6A, 24mΩ@4.5V

30V/3A, low saturation voltage drop PNP transistor integrated 20V trench N-MOSFET

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 65 VGS(th)(v) 1.5 RDS(ON)(m?)@4.212V 10 Qg(nC)@4.5V 13 QgS(nC) 5 Qgd(nC) 4.2 Ciss(pF) 1340 Coss(pF) 270 Crss(pF) 40