Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
HUAKE (Huake)
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VISHAY (Vishay)
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TOSHIBA (Toshiba)
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SPS (American source core)
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Cmos (Guangdong Field Effect Semiconductor)
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Long-Tek (Long Xia)
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SALLTECH (Sari)
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CJ (Jiangsu Changdian/Changjing)
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Q1: N-channel, 30V, 16A, 10.2mΩ@10V Q2: N-channel, 30V, 18A, 7.7mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
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P-channel, 250V, 205mA
Descripción
Sungine (dual competition integration)
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50V, 8-channel high withstand voltage and high current Darlington array
Descripción
DIODES (US and Taiwan)
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SPS (American source core)
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onsemi (Ansemi)
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This NPN bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 650V, 12A, 330mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 30/36 Continuous Drain Current ID (A) 5
Descripción