Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
Fabricantes
N-channel 100V 150A
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
PNP 120W -160V -12A Applications: power amplifier applications Recommended for 80W high-fidelity audio amplifier output stage applications
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
YFW (You Feng Wei)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel, 25V
Descripción
HUASHUO (Huashuo)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 600V, 66A, 42mΩ@10V
Descripción
TOSHIBA (Toshiba)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 50V Collector current (Ic): 200mA Power (Pd): 150mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA, 10mA Characteristic frequency (fT): 200MHz Operating temperature: +125℃@(Tj)
Descripción
WEIDA (Weida)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
WEIDA (Weida)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for general-purpose amplifier and switching applications where isolation of the device mounting surface from a heat sink or chassis is required.
Descripción